Jinlan Power Semiconductor’s launches a series of Power modules based on silicon carbide (SiC) technology, including SiC MOSFET modules and SiC hybrid modules. These are specifically designed for demanding applications such as automotive electric drives, charging piles, and photovoltaic inverters where high reliability is critical.

SiC MOSFET Module

Adopting third‑generation wide‑bandgap semiconductor technology, it features extremely low switching losses, high operating junction temperature, and excellent high‑frequency switching capability, significantly improving system Power density and conversion efficiency.

SiC Hybrid Module

This module integrates an IGBT with SBD in a high‑Power‑density package. Compared with conventional non‑hybrid modules, it offers lower switching losses and allows higher operating temperatures. It is particularly suitable for high‑Power applications requiring low losses, as well as systems pursuing high‑frequency switching – in such systems, the SiC hybrid module delivers higher overall efficiency.

Product Series Matrix:

Jinlan's SiC power module series precisely matches diverse application requirements ranging from new energy vehicle traction inverters to highvoltage charging piles and photovoltaic & energy storage systems, helping customers achieve higher efficiency and power density in highvoltage, hightemperature, and highfrequency scenarios.

 Jinlan Power Semiconductor’s SiC Power module series helps customers achieve more efficient and compact system designs in high‑voltage, high‑frequency, and high‑temperature scenarios.